Humungus
Full Member level 6
I go for the implant energy;-)
In PD, as the active silicon film is quite thick (100 - 200nm) the implant energy, even if some care must be put on it, tolerates some uncertainty levels. In FD, as the film is quite thin, the implant energy must be carefully chosen and controlled to place the center of the implan distribution in the center of the active silicon.
Look for material at www.dice.ucl.ac.be and www.emic.ucl.ac.be
In PD, as the active silicon film is quite thick (100 - 200nm) the implant energy, even if some care must be put on it, tolerates some uncertainty levels. In FD, as the film is quite thin, the implant energy must be carefully chosen and controlled to place the center of the implan distribution in the center of the active silicon.
Look for material at www.dice.ucl.ac.be and www.emic.ucl.ac.be