Spice Model Parameter for DDCC

I am trying to simulate 'Novel CMOS Differential Voltage Current Conveyor' by 'Elvan and Solimon'.

IEEE paper by them mentions to use '2um SCN Process Parameter through MOSIS'

I need this parameter to simulate the circuit.

I have been to MOSIS website but it gives parameter below 0.5um

Can anybody help me in this regard?

I would recommend you try to determine the real foundry
used by MOSIS when that flow was actively supported,
and try to find archived copies of that PDK. Maybe at
NCSU, Idaho, or whoever else was an early MOSIS adopter.

And of course the authors themselves might be willing
to point you at some larger body of work, or even share
obsolete design files if they're academics with no "IP
envy".

But that aside, I think you could just stick with the
topology and use whatever foundry info you deem
relevant - only voltages, length effects and speeds
ought to change much.

The other alternative is to dig around for medium
voltage power management processes; something
in the 12V range is likely to be a ~ 2um gate length
and a 300-500A gate oxide.

savan said:

IEEE paper by them mentions to use '2um SCN Process Parameter through MOSIS'

I need this parameter to simulate the circuit.

I have been to MOSIS website but it gives parameter below 0.5um

Can anybody help me in this regard?

Click to expand...

The MOSIS directory of Wafer Electrical Test Data and SPICE Model Parameters in its Obsolete entry still contains data and downloadable SPICE models of the SUPERTEX SCNA-20 2.0µm process: SPICE Level 3 & Level 8 models.