krashkealoha
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pspice for sic bjt
You state that the SiC Vbe turn on voltage is 2.7V, but in a previous message ("bjt modeling") you had output characteristic curves (Ic vs. Vce) where the transistor has collector current below Vce=2V. Are the output characteristic curves the same transistor? If they are the same, how is it possible to get the collector current less than Vce=2V when the turn on voltage is 2.7V?
Yes, the 4140 should be able to test the bjt. You can step the forcing voltage and measure a current. There are examples of how to measure a diode, and a mosfet transistor in the manual/application notes. If your turn on voltage is 2.7V, then you should apply a large Vce voltage (greater than 5V).
You state that the SiC Vbe turn on voltage is 2.7V, but in a previous message ("bjt modeling") you had output characteristic curves (Ic vs. Vce) where the transistor has collector current below Vce=2V. Are the output characteristic curves the same transistor? If they are the same, how is it possible to get the collector current less than Vce=2V when the turn on voltage is 2.7V?
Yes, the 4140 should be able to test the bjt. You can step the forcing voltage and measure a current. There are examples of how to measure a diode, and a mosfet transistor in the manual/application notes. If your turn on voltage is 2.7V, then you should apply a large Vce voltage (greater than 5V).