Pspice Modeling of BJT curve Ib vs Vbe

[krashkealoha]

pspice for sic bjt

You state that the SiC Vbe turn on voltage is 2.7V, but in a previous message ("bjt modeling") you had output characteristic curves (Ic vs. Vce) where the transistor has collector current below Vce=2V. Are the output characteristic curves the same transistor? If they are the same, how is it possible to get the collector current less than Vce=2V when the turn on voltage is 2.7V?

Yes, the 4140 should be able to test the bjt. You can step the forcing voltage and measure a current. There are examples of how to measure a diode, and a mosfet transistor in the manual/application notes. If your turn on voltage is 2.7V, then you should apply a large Vce voltage (greater than 5V).

 

[viren]

constant vbe

hi,
Thank you for your suggestion .
The Vbe=2.7V is the p - n junction threshold voltage and so at 2.7 volts the Ib curve jumps like an exponential curve and before 2.7 V there is no base current . And the Ic vs Vce curves are correct . I have used the same BJt device.
viren