is 0.25micron 5V, a standard CMOS process?

hello guys..
As the title said: "Is 0.25micron 5V, a standard CMOS process"?

thanks..

It could be not. Generally, 0.25um device can't withstand 5V.

As leo said, 0.25um devices cannot withstnad 5v. The maximum Vds and Vgs for these devices is 2.5v. there are 0.25um technologies that have devices withstand 3v and up to 3.3V.

allennlowaton said:

"Is 0.25micron 5V, a standard CMOS process"?

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Not a standard, but from some foundries available as an option:

Compatible 3.3 V and 5V Input/Output.
Available as an option. A split gate oxide thickness is used (85 Å).
Minimum channel length is 0.5 μm for NMOS and 0.5 μm for PMOS. Spacing between active must be 0.72 μm.

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I think you're going to have trouble being reliable below
100A Tox and 0.8um Leff. I know some people who had
quite a struggle at 0.6um, had to engineer the hell out
of the drain. I've built devices at 90A and 0.8um that
looked pretty good, but hot carrier didn't pass (some
walk-out, FETs got better but any movement is bad
according to the rules).

But different people have different ideas of what "reliable"
means. Used to be, real men wanted 7V abs max and 6V
lifetest-passed for a "5V" technology. But there's been a
lot of spec- and expectation-shaving since.

So what does "5V" mean to you? 5.00V on a nice spring
day, or 5.5V at 135C (oxide wearout) and -55C (hot
carrier) for 2000 hours apiece?

dick_freebird said:

So what does "5V" mean to you? 5.00V on a nice spring
day, or 5.5V at 135C (oxide wearout) and -55C (hot
carrier) for 2000 hours apiece?

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hello sir: I'm just a beginner. The only data I have right now is Vin = (2.7V~4.2V) from Li-ion batt and Vout (3.5~4.9V)..

Some designers used stacked structure (cascode two transistors) to increase operating voltage.