LvW
Advanced Member level 6
Or another attempt for explanation:
Each transistor (BJT as well as FET) has a non-linear transfer function Ic=f(Vbe) starting at the origin. This curve has an exponential shape like a pn diode.
Therefore, to operate the device in a small and quasi-linear region along this function (with the aim not to distort a sinusoidal input signal) we have to "bias" the device with a suitable dc voltage Vbe,dc and a corresponding dc current Idc. This gives the often mentioned "bias point" or Q-point.
Each transistor (BJT as well as FET) has a non-linear transfer function Ic=f(Vbe) starting at the origin. This curve has an exponential shape like a pn diode.
Therefore, to operate the device in a small and quasi-linear region along this function (with the aim not to distort a sinusoidal input signal) we have to "bias" the device with a suitable dc voltage Vbe,dc and a corresponding dc current Idc. This gives the often mentioned "bias point" or Q-point.