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Here the method I use:
- Put the switch ON (NMOS gate =VDD, PMOS gate=0)
- Place 2 voltage sources at each end of the switch, one with value V, the other with V+0.1~V+0.3
___
__V__| |__V+0.1__
- Do a sweep on V
- Plot the current, and you get the resistance by 0.1~0.3/I.
Remark: 0.1~0.3 it will be the voltage drop at your switch. The lower the best.
PMOS and NMOS L = minimum
W -> Start with 5u for this plot. Then depending on the resistance your system required and the operating voltage increase the P or NMOS.
I agree with sunking that you can do hand calculation. However for submicron process the result is quite diffenrent than the simulation. I once tried with 0.13u switch and the simulation value was more than twice the calculated. Hand calculation for submicron should be done with care.
linearity is affected by device size, charge injection and clock feedthrough.
Here is a course note(p.e.allen cmos analog circuit II) on analog switch.
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