Hi anhnha,
Good to see that you have designed an error amplifier as suggested by others ...
A few things to note: Keeping a few MOSFETs into sub-threshold in fact helpful. As you know that a MOSFET contributes more gm if it is in sub-threshold. If you know which all MOSFETs are contributing gm in your gain equation then you can get higher gain by making those MOSFETs operate in sub-threshold. You can keep M3&M4 and M11&M12 in sub-threshold as the gain equation is Av = gm3 * (ro13 || gm12*r012*ro8) (approx ) (In your ckt)
Again the MOSFETs in the bias arm M2 and M5 should be also be in sub-threshold for proper bias generation for M11 & M12
Let us know your observations ..... Hope this will help ..