tarun_taurus
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variation of pvt for corners
process variation: relates to change of functioning of MOS (PMOS or NMOS), Capacitor,Resistor.
this means in actual chip where you have 1000s of transistors , you can actually expect that some MOS will be working at different speed(i mean Vt,mobility etc. will be different )
The corner simulation you do actually take into account of this process variation and other variations also like current (if you have current source) voltage (VDD) variations...(generally 10-15%)
so its right that if at all corners your simulation is working then ON -Chipit will (assuming no other eorros done )
process variation: relates to change of functioning of MOS (PMOS or NMOS), Capacitor,Resistor.
this means in actual chip where you have 1000s of transistors , you can actually expect that some MOS will be working at different speed(i mean Vt,mobility etc. will be different )
The corner simulation you do actually take into account of this process variation and other variations also like current (if you have current source) voltage (VDD) variations...(generally 10-15%)
so its right that if at all corners your simulation is working then ON -Chipit will (assuming no other eorros done )