CMOS 0.18 µm technology

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sina-rp

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I want to know whats the diffrence between output resistance (ro), thershold voltage, current relastion ,... in CMOS 0.18 µm technology and for example 0.35 µm or 0.7 µm? I mean anyone can help me to find relations of these parameters (ro, thershold voltage, current,…) in CMOS 0.18 µm. I want to know about a single n-mos or a single p-mos in this technology. thanks
 

Output resistance (ro) doesn't depend so much on process size, but much more on used channel length.

Threshold voltage in principle can be adjusted by technological processes to an arbitrary value independently of the process size; in standard processes, however, adjusted threshold voltage tends to decrease with process size (necessary because the supply voltage decreases, too).

The technology current (drain current in moderate inversion (IC=1) for W=L transistors) tends to increase inversely proportional to the process size.
 
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