dick_freebird
Advanced Member level 7
Re: NEED HELP ,how to calaculate the gate resistance of Igbt (fg25n120) /Mosfet
More gate resistor increases risetime / falltime but this is not
how you want to get dead time (i.e. nobody conducting).
You might end up with a by-the-50%-level "dead time" but
have a significant cross conduction.
As fast as the FET can take (drain dV/dt) is usually best
for overall switching losses, other than taking advantage
of soft switching perhaps - and this is more about phasing
than slew rate.
More gate resistor increases risetime / falltime but this is not
how you want to get dead time (i.e. nobody conducting).
You might end up with a by-the-50%-level "dead time" but
have a significant cross conduction.
As fast as the FET can take (drain dV/dt) is usually best
for overall switching losses, other than taking advantage
of soft switching perhaps - and this is more about phasing
than slew rate.