Where to find some values in Spice model Level 49?

[skynet]

Hi All,

I am a newbie in Mixed Signal, my problem sound like this, I got the spice model level 49 from mosis, and I doing an analysis about V/I characteristic of the MOSFET transistor, I try to find the Ids using hand calculation using equation of

Ids = B((Vgs-Vt)Vds - (Vds^2)/2)
B is the factor gain, which derieve from equation

B = (uE/tox)(W/L)
u: effective surface mobility of the carriers in the channel
E: Permittivity of gate insulator

where can I find the value of u and E in spice model level 49, I can find tox in spice model level 49 but not u and E.

thanks

 

[dibl01]

spice3 level49

Hi All,

I am a newbie in Mixed Signal, my problem sound like this, I got the spice model level 49 from mosis, and I doing an analysis about V/I characteristic of the MOSFET transistor, I try to find the Ids using hand calculation using equation of

Ids = B((Vgs-Vt)Vds - (Vds^2)/2)
B is the factor gain, which derieve from equation

B = (uE/tox)(W/L)
u: effective surface mobility of the carriers in the channel
E: Permittivity of gate insulator

where can I find the value of u and E in spice model level 49, I can find tox in spice model level 49 but not u and E.

thanks

Hspice leve 49 is based on BSIM 3.3 model. It is much more complicated than the spice level 1 model you are using. So level 49 does not use simple parameters like u. for E, just use silicon oxide value. For u, I guess staturation value is a good guess. Since you have already got the TSMC model file from MOSIS. Just do a simple HSPICE simulation than you will get a good estimation of IV curve.

 

[skynet]

how to find cox level 49

Hi dibl01,

That mean that the the equation that given cannot be used to estimate the Ids curve using hand calculation? I knowing that W/L parameter can be used to control the Ids. should i sweep the W/L ratio in order to get understanding what is the effect of W/L ratio toward Ids curves?

 

[tlihu]

spice level 49 to level 1

I think you can do some hand calculations since BSIM3 still provides the parameters. I suggest you read the HSPICE MOSFET Models Manual carefully and try to figure out how to calculate u and Cox.

 

[dibl01]

spice model level

Hi dibl01,

That mean that the the equation that given cannot be used to estimate the Ids curve using hand calculation? I knowing that W/L parameter can be used to control the Ids. should i sweep the W/L ratio in order to get understanding what is the effect of W/L ratio toward Ids curves?

The equation above is really meant for long channel devices. For deep sub micron process, it is not accurate. Here is the doc. for hspice level 49.

**broken link removed**

You can use "U0" the low field mobility in hand calculation. However, it is still a good idea to do a simple simulation if you are dealing with short channel devices. (Just use .ALTER in hspice to change W/L as you needed)

 

[rfic]

pspice model level

Who have some models about siGe HBT??

Share!

 

[v_naren]

u0 spice mos model mobility