jianke
Member level 3
Hi everyone! I am reading a paper about a CMOS LNA design. But I am not sure where the parameters' values of a CMOS technology are from???
The process used in the paper is SMIC 0.18um RF CMOS processes. The values cited are:
(1) Gate oxide capacitance per unit area, Cox=9mF/(m^2);
(2) Body effect parameter, r=3;
(3) One measure of the departure from the long-channel regime, a=0.5;
(4) NMOS charge-carrier effective mobility, un= 3.4*10^(-2) (m^2)/(VS);
Maybe SMIC is not popular in your country, but for other RF CMOS technologies, such as TSMC or another one, how can I find those parameters values??? Thanks!
The process used in the paper is SMIC 0.18um RF CMOS processes. The values cited are:
(1) Gate oxide capacitance per unit area, Cox=9mF/(m^2);
(2) Body effect parameter, r=3;
(3) One measure of the departure from the long-channel regime, a=0.5;
(4) NMOS charge-carrier effective mobility, un= 3.4*10^(-2) (m^2)/(VS);
Maybe SMIC is not popular in your country, but for other RF CMOS technologies, such as TSMC or another one, how can I find those parameters values??? Thanks!