What's the loss tangent value of high sensitivity silicon?

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I am trying to simulate a CPW on a high-resistivity silicon (5000 ohm.cm) substrate. I am wondering what will be the correct value for loss tangent of this substrate. Can anyone tell me if there is any reference to look for?
 

Loss tangent value

hello, I have found the following data on silicon substrate (from the book of Leif Halbo and Per Ohlckers: electronic components, packaging and production):

1. SiC:
resistance (ohm*cm) = 10^13
eps = 15 to 45
tand = 5*10^-2

2. Si
resistance (ohm*cm) = 10^4 (they also indicate 10^-4, I dont understand this well)
eps = 11.9
tand = 4*10^-2 / 4*10^-3

3. SiO2
resistance (ohm*cm) = 10^6
eps = 3.9
tand = 3*10^-2

4. Si3N4
resistance (ohm*cm) = 10^12
eps = 7.5
tand = ---
 

Re: Loss tangent value

If I were you, I would ask the substrate manufacturer, to be 100 % sure. Do you have a data sheet (substrate material specification)?

limate said:
I am trying to simulate a CPW on a high-resistivity silicon (5000 ohm.cm) substrate. I am wondering what will be the correct value for loss tangent of this substrate. Can anyone tell me if there is any reference to look for?
Click to expand...
 

Loss tangent value

Hello again, I found new data in the same book.

Indicates "high resistive silicon" rho = 10^3 ohm*cm

epsilon = 11.9
tand = 0.015

hope it helps. regards
 

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