Steven De Bock
Junior Member level 3
Matchasm said:Currently, I am designing a real-life product in a state-of-the-art CMOS process for a large company.
I don't actually look into the book nowadays, because I know output resistances and one basic saturation formula by heart:
Id = 1/2 * mu * cox * W/L * (Vgs-Vth)^2
This is something which I find rather peculiar. As a student, I'm working on my masterthesis in a 0.35 um technology. It is far from evident to apply the formula stated above, for Vds > Vdsat.
Granted, from the knowledge of the output resistance, it should be possible to calculate lambda and use the formula
Id = 1/2 * mu * cox * W/L * (Vgs-Vth)^2 (1 + lambda*(Vds - Vdsat))
Now, how do you experts cope with the less accuracy of LEVEL 1 mosfet models in a more advanced technology?
Another issue I have is about the approximation of parasitic capacitances such as gate-source capacitance, gate-drain capacitance?
BTW matchasm, how do you learn output resistances by heart?
Any thoughts concerning these issues would be highly appreciated and very helpful!
Thanks!