MOSFET ? JFET ?
This is static parameters :
Rds responsible for power losses and heating MOSFET Ploss = Rds*Ids^2
Ids = maximum allowed current for your application.
Vds = maximum allowed Drain to Source Voltage
Vgs = voltage treshold for opening MOSFET.
When you compare two MOSFET :
Ids and Vds greater = better for you
Rds less = better for you
Dynamic parameters :
Qtotal = total gate charge
Cin = input capacitance
Cout = output capacitance
all less = good for you
Switch parameters :
Turn-On Time = time for open DS channel
Turn-Off Time = time for close DS channel
all less = good for you
When you select MOSFET :
see first that Ids and Vds of MOSFET
greater then required for application
second (for switching application)
times for on and off must be 5..10 times less then
maximum switching frequency
At last see for Maximum Power Dissipation (PD),
and thermal conditions of MOSFET. When MOSFET
open Ids*Vds must < then Maximum Power Dissipation,
but it's very roughly, i can't explain in two words how to be with power dissipation it's include number factors.
If you are beginner no matter who is manufacturer of
your MOSFET.