What is the breakdown voltage for Schottky diode?

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schottky

Dear All

I would like to know what actually breakdown voltage is for a Schottky diode? Is it the reverse bias voltage of a diode that cause extremely excessive leakage current same as an ordinary diode?
Let's say metal layer connected to Silicon and it is a schotty diode, if there is a small circular metal void underneath the metal line but at the silicon surface, will the breakdown voltage be higher or lower than usual and theory that supports this.

Thank you for your help in advance.

best rgds and thanks
Jason
 

Re: Schottky diode

Your question is confusing, please reformulate.

A Schottky diode has almost the same caracteristics as an usual diode.

The diference is that voltage drop is little (0.2V-0.3V) compared to a normal diode (0.7V typical). That make it verry fast in comutation .
The price paid is leakage curent wich is increased
 

Re: Schottky diode

Dear Expert.

The leakage current increase imply that the breakdown voltage will be smaller right?

My question is if there is a metal void not on the surface of metal but on the interface between contact silicon and metal. What will happen to the breakdown voltage? Will it be higher?

Thank you

rgds
Jason
 

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