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In fabrication, during processes like plasma etching and ion implantation , its possible for the ions to get accumulated. Uncontrolled discharge of these ions can damage the gate oxide leading to failure of transistor. To overcome these, jumper diodes r used.
In the fabriction of a chip as the higher metal layers are being deposited ,due to process effects such as etching,ion implantion,some of the ion get collected at the interface of the successive oxide layers.As these layers grow in number ,there will be path existing between gate and higher metal layer ,when a sudden electric discharge takes place.Gate oxides break down.
Remdies to avoid antenna efect:
1 .Reverse bias diodes placed near gate oxides .
2. Metal hopping as layers change
u get all different runsets for verification tools.....so one is there for antenna check ......which would give the desired op....and then inserting diodes.....one way to remove antenna effect.........
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