Static characteristics might matter to conduction losses but this is
not a static application per se (duh). You might use static power
dissipation, thermal impedance, SOA corner-carve to assess a
dynamic dissipation result (although switching does distribute
the losses a bit differently within the device, probably close
enough for rough reliability results-vs-rules figuring).
Dynamic characteristics can be used to infer some switching loss
contributors like raw gate capacitances' "shuttle charge" and if
you also know the gate driver attributes, perhaps some idea of
the Miller plateau's and the risetimes on either side of it durations
(which is a complicated Id(t)*Vds(t) power dissipation "waveform"
which you'd like to know as a Joule slug per cycle (and its back
half of the cycle too).
If you have a credible device model I'd take that and its simulated
results over any attempt to fine-analyze switching losses in closed
form.