What is EPSROX (Er: Gate Dielectric constant) in BSIM3v3?

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Alex Liao

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Hi,

I found Er = 3.9 in BSIM4.5 manual and used in calculation of Cox.
But there is no information of Er in BSIM3v3 which is used in .18um technology.

1. Is Er technology-independent which means it holds for 3.9 for all technologies?
2. If there is no such parameter in old version, how do people calculate Cox(Coxe or Coxp)?

Thanks,
 
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Alex Liao said:
1. Is Er technology-independent which means it holds for 3.9 for all technologies?
Click to expand...
Nearly ;-). It's the physical dielectric coefficient of SiO2 , i.e. as long as you stay with this dielectric, it is independent of structure size or BSIM versions. Other dielectrics like Si3N4 or Al2O3 (or even high-k dielectrics like HfO2 or TiO2) have considerably higher εr's.

Alex Liao said:
2. If there is no such parameter in old version, how do people calculate Cox(Coxe or Coxp)?
Click to expand...
These are extracted parameters (extracted via measurements on silicon). Coxp is the capacity resulting from real physical thickness of the oxide, Coxe is the capacity used for (electrical) SPICE calculations, which considers additional interface effects (fixed interstate charges).
 
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