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latchup in MOSFET means the formation of a parasitic pnpn thyristor type formation which leads to a short circuit path between the supplies and ultimately leading to the destruction of the MOS device.....
it is when the body terminal is given forward biased with respect to the source terminal it leads to current flow which acts similar to the gate current of a thyristor leading to latchup which means a lot of current flow....ultimately it damages the device...
generation of a low impedance path in CMOS chip between power supply & ground due to interaction of the parasitic pnp and npn bi-polar transistors.
thses BJT form a silicon -controlled scr rectifier with+ve feedback & virtually short the power rail to ground this causes high current .the device i will permanently damaged .
there are some solution to solve the latchup promblem
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