ccw27 said:Can anyone explain what are the main differences between the three corners (SS,TT and FF) and why the worst case is SS with 0.9Vdd @ 130°C and best case is FF with 1.1 Vdd @ -30°C.
Thanks
Teddy said:Corners are usualy calculated as +/- 3 sigma values of Typical. What you indicate are simulation conditions not the SS/TT/FF spice model corners.
lakeoffire said:This is not always ture. Sometimes the worst case happens at fast NMOS, slow PMOS, and so on.
ccw27 said:Can anyone explain what are the main differences between the three corners (SS,TT and FF) and why the worst case is SS with 0.9Vdd @ 130°C and best case is FF with 1.1 Vdd @ -30°C.
Thanks
cretu said:lakeoffire said:This is not always ture. Sometimes the worst case happens at fast NMOS, slow PMOS, and so on.
ccw27 said:Can anyone explain what are the main differences between the three corners (SS,TT and FF) and why the worst case is SS with 0.9Vdd @ 130°C and best case is FF with 1.1 Vdd @ -30°C.
Thanks
You probably should do all these corner simulations first and only after that you can decide which is the worst case for your particular application. Could be any parameter from power consumption, low speed, gain etc.
Vamsi Mocherla said:Most importantly, the corners of a process are designated by five parameters
1. Mobility variation due to implantation of N+ and P+
2. Vth variation
3. Resistance of the actives
4. Body coefficient
5. Oxide thickness
Other parameters like the effective Length, effective width, Cjsw caps, Cj caps also change. Hence Slow Slow, Fast Fast corners come into picture
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