Vt of an Nmos with Temperature Sweep

Status
Not open for further replies.
G

Ghaznavi

Newbie level 3
Joined
Jun 17, 2014
Messages
3
Helped
0
Reputation
0
Reaction score
0
Trophy points
1
Visit site
Activity points
25
Hi all,
I want to measure the Vt against temperature sweep graph,

1) What I dont know is how to include the V(threshold) of a an NMOS in the design as an output so that I can sweep over temperature then,.

2) Secondly, I know that Vt decreases as the temperature increase and so I expected the Id VS Vds curves should rise higher (for e.g. Id(100°C) > Id(25°C) in the saturation region) but What I observe if opposite,

Can any Please let me know the answer to 2 questions,

thank you,
 

1) You might just connect a FET as a MOS diode and bias
it with 1uA/square and pick off the voltage, if you can't
find a .probe syntax that gives you the operating point
value. The model parameter value won't change.

2) mobility drops meanwhile, so you have a foot-race sort
of situation. Extrinsic resistances also rise. That's why we
use simulation-in-detail instead of pencil and paper and a
boatload of "simplifying assumptions".
 

Status
Not open for further replies.

Similar threads

Menu
Log in
Register
Cookies are required to use this site. You must accept them to continue using the site. Learn more…