Whether the resistor drive circuit is suitable, depends
on what you want at the load for transition time, etc.
Switching the load too slowly can impart a large slug
of thermal energy to the transistor die. There is a
pulsed energy limit and too much time spent dissipative
(not "off", not fully "on") can fry a device. This is the
reason (beyond switching efficiency) for wanting high
gate drive current capability.
Transistor specs such as "off" leakage are under one
well specified condition. For example you often see
"off" leakage at Vgs=0, Vds=max rated. But at Vgs=0.9V
(as you might see in an emitter-follower (Class B) style
as you showed) all you have to go on is "typical"
datasheet curves and any anecdotal bench data you
can generate for yourself (which excludes the range
of process variation, and so on).