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A- macroporous silicon

The macroporous etching technology originally developed by Lehmann et al., is naturally adapted to the fabrication of regular lattices of air holes in silicon. The etching process is as follows. First, a silica mask of the photonic lattice pattern is obtained on a low doped (100) N type silicon wafer by lithography. We use different lithography methods depending on the required lattice period. A hot KOH etch gives a lattice of pyramids pointing to the rear side of the wafer. Each pyramid created at the surface of the wafer is the starting point for a macro pore. The wafer is then used as the anode in an electrochemical cell. The electrolyte used is 2-5% hydrofluoric acid. A back side illumination oh the wafer enables to control the dissolution current and therefore the cylinder diameters. With this etching technique pores with a variable radius, more than 100 um deep following the vertical (100) silicon crystal direction are obtained on 1 cm of silicon. A thermal oxidation followed by HF dip in order to remove the oxidized silicon layer is sometimes used to enlarge the pore radius.
The photonic crystals are then obtained by cutting parallelepiped slices from the bulk macroporous with a rotative diamond saw. The slices are cut to obtain a photonic crystal interface parallel to the cylinders axes and perpendicular to one or the other of the photonic crystal directions. When only reflection characterizations are performed the interfaces can be obtained simply by cleaving the bulk macroporous silicon (as long an the photonic crystal planes are parallel to the silicon crystal planes)

halouma said:

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help me translate this oaragraph into french
A- macroporous silicon

The macroporous etching technology originally developed by Lehmann et al., is naturally adapted to the fabrication of regular lattices of air holes in silicon. The etching process is as follows. First, a silica mask of the photonic lattice pattern is obtained on a low doped (100) N type silicon wafer by lithography. We use different lithography methods depending on the required lattice period. A hot KOH etch gives a lattice of pyramids pointing to the rear side of the wafer. Each pyramid created at the surface of the wafer is the starting point for a macro pore. The wafer is then used as the anode in an electrochemical cell. The electrolyte used is 2-5% hydrofluoric acid. A back side illumination oh the wafer enables to control the dissolution current and therefore the cylinder diameters. With this etching technique pores with a variable radius, more than 100 um deep following the vertical (100) silicon crystal direction are obtained on 1 cm of silicon. A thermal oxidation followed by HF dip in order to remove the oxidized silicon layer is sometimes used to enlarge the pore radius.
The photonic crystals are then obtained by cutting parallelepiped slices from the bulk macroporous with a rotative diamond saw. The slices are cut to obtain a photonic crystal interface parallel to the cylinders axes and perpendicular to one or the other of the photonic crystal directions. When only reflection characterizations are performed the interfaces can be obtained simply by cleaving the bulk macroporous silicon (as long an the photonic crystal planes are parallel to the silicon crystal planes)

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Un macroporeux-silicium

La technologie de gravure macroporeux initialement développé par Lehmann et al., Est naturellement adaptée à la fabrication de réseaux réguliers de trous d'air dans le silicium. Le processus de gravure est la suivante. Tout d'abord, un masque de silice de la forme de treillis photonique est obtenue sur un peu dopée (100) N plaquette de silicium de type par lithographie. Nous utilisons des méthodes de lithographie différents en fonction de la période de réseau nécessaires. Une gravure KOH à chaud donne un réseau de pyramides pointant vers l'arrière de la plaquette. Chaque pyramide créée à la surface de la plaquette est le point de départ pour un pore macro. La plaquette est ensuite utilisé comme anode dans une cellule électrochimique. L'électrolyte utilisé est de 2-5% d'acide fluorhydrique. Un éclairage arrière oh la plaquette permet de contrôler le courant de dissolution et, par conséquent le diamètre du cylindre. Avec cette technique de gravure pores d'un rayon variable, plus de 100 um de profondeur suivant la verticale (100) direction cristal de silicium sont obtenus sur 1 cm de silicium. Une oxydation thermique suivie par HF immersion afin d'éliminer la couche de silicium oxydé est parfois utilisé pour agrandir le rayon des pores.
Les cristaux photoniques sont alors obtenus en coupant des tranches parallélépipède de la masse macroporeux avec un diamant rotative de scie. Les tranches sont coupées pour obtenir un cristal photonique interface parallèle aux axes des cylindres et perpendiculaire à l'une ou l'autre des directions cristal photonique. Lorsque caractérisations de réflexion que sont effectués les interfaces peuvent être obtenues par simple clivage du silicium massif macroporeux (tant une avions le cristal photonique sont parallèles aux plans de cristal de silicium)

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