Hello.
I said it is a mistake in the book, because at page 193 in "Design of Analog CMOS Integrated Circuits 2nd Edition" it is written: "Note that Cgs/gm is approximately equal to ωT = 2*pi*fT." and as you pointed, it should have been gm/Cgs.
The first book does mention the term "transit frequency" at page 40, exercise 2.13. This exercise is alos in the 2nd edition at page 41. Since Cgs >> Cgd because when the transistor is in saturation Cgd is ≈ Cgdo (the overlap capacitance), we can safely asume, with small error that ft≈gm/Cgs.
For the source follower Razavi approximates the first pole as: ωp1=gm/(Cgd*Rs*gm+CL+Cgs) (page 189 2nd edition). We see now that if CL+Cgd*Rs*gm << Cgs, ωp1≈ωT≈gm/Cgs. If we asume our source follower has a first order LPF characteristic, with the pole located at ωp1, then the voltage gain at fp1 is 1/sqrt(2)*A0=0.7*A0, where A0 is the dc gain. (This asumption is valid if ωp1<<ωp2). Since for a source follower the dc gain is 1(idealy), this means that the gain at fp1 = 0.7.
Hope it helps.