Mar 18, 2012 #1 D dilipbagadi Newbie level 1 Joined Jan 22, 2012 Messages 1 Helped 0 Reputation 0 Reaction score 0 Trophy points 1,281 Activity points 1,286 what should be the threshold voltages given for pmos and nmos in 65 and 45nm technology? and what should be the corresponding supply voltage given? is there any relation to find the threshold voltages with respect to the supply voltage given??
what should be the threshold voltages given for pmos and nmos in 65 and 45nm technology? and what should be the corresponding supply voltage given? is there any relation to find the threshold voltages with respect to the supply voltage given??
Mar 18, 2012 #2 R RCinFLA Advanced Member level 2 Joined Aug 31, 2010 Messages 605 Helped 187 Reputation 378 Reaction score 190 Trophy points 1,323 Activity points 5,795 Most 65 and 45 nm processes have dual or triple oxide options along with low threshold and high threshold options on the single oxide option. Multiple oxide layer thicknesses is used to achieve higher I/O voltage capability. Low and high threshold processes are used to trade off speed vs. leakage which is a big issue with deep submicron processes. So there can be many gate threshold voltages. Last edited: Mar 18, 2012
Most 65 and 45 nm processes have dual or triple oxide options along with low threshold and high threshold options on the single oxide option. Multiple oxide layer thicknesses is used to achieve higher I/O voltage capability. Low and high threshold processes are used to trade off speed vs. leakage which is a big issue with deep submicron processes. So there can be many gate threshold voltages.