I have read in several texts the gate-source capacitance expressed in terms of Cox, W, and L.
However I am wondering what its temperature dependence could be? I assume that W and L do not change with temperature, so it must be Cox is the temperature dependent parameter, which I find written as:
εox/tox
So I assume that thickness does not change with temperature and it must be εox as the temperature dependent parameter. BUT then I read that with increasing temperature this dielectric property supposedly DECREASES with temperature, so Cgs sould also decrease? But I am sure it is the opposite
I thought these capacitances were supposed to have an exponential relationship with temperature (a professor once told me this)
So what is the deal?