Hi,
Just curious: Is there any reason not to use e.g. a correctly biased MOSFET's body diode for temperature compensation of another component/subcircuit instead of a leaky Schottky diode (so long as initial 25°C Vf is required voltage level)?
I'm sure that whilst doing a bit of reading a few weeks ago I was surprised to see a power MOSFET like IRF9540 body diode Vf vs Tamb graph showed 100mV Vf drop across temperature (I might be confusing it with another of the multiple datasheets I was reading at that time, admittedly, but 100mV or 1,000mV is not so important wrt the general question), same as a Schottky and much less than a silicon one like 1N4007 or 1N4148 or a BJT.
And, besides NTCs, temperature sensors that do 10mV/°C, etc., what other components can be used/'misused' for temperature compensation? Any personal tips and/or tricks and favourites, or warnings wrt 'beginner beware' naive 'great ideas'?
Just chitchat to get ideas for future, the questions are not for a specific project.
Thanks.