On the other hand, what about this opposite approach? ie, both FETs being driven off the same gate drive transformer..
Opposite Approach.....
We will do a Gate drive transformer (GDT) for a Offline Two Transistor Forward.
We will have both FETs driven from a secondary coming from this same GDT.
We will use EFD20107 with 3F3 ferrite, and no gap.
Primary will be two series halves, each of 36 turns.
These will "sandwich" the two secondaries.
We will make secondary1 of 72 turns, (2 layers of 36 turns)
Ditto secondary two.
I believe that this "double layer" secondary thing will mean less
interwinding capacitance from pri to sec.
Would you agree?
pri, sec1 and sec2 will each be 6.2mH.
I mean, you can scope the top gate drive out by just scoping the identical bottom one.
And in theory, both FETs have more chance of having the same switching loss?