Good afternoon, dick_freebird! I really appreciate both of your responses. To be honest, I am not entirely sure what do you mean by the sentence: "A thing to look at, is whether the S, D diodes have any model properties populated, and whether individual devices have junction area and periphery props set, to scale them for C and (you wish) leakage." Can you please explain in little bit more detail what do you mean by that? As you mentioned, the I-V characteristics are the first thing I haven taken a look at even before testing this very circuit. (To be honest these ones I tested for gpdk090 and not for this one). They look a the one I would expect yo see from a short-channel devices.Again, these are fake (non-silicon, just how "real" when there's nothing to "fit"?) devices / models, right? I advised a closer look at FET I-Vs to see if the problem is "from above".
A thing to look at, is whether the S, D diodes have any model properties populated, and whether individual devices have junction area and periphery props set, to scale them for C and (you wish) leakage. Also, a realistic FET will have channel leakage from the surface states (NFS in older models, dunno what yours look like). If your sub threshold slope looks "too good to be true" then maybe it is.
Thank you, Dominik, for your response! You are absolutely right regarding the CM connection - I was just stacking on transistors for this technology to see if Spectre gives any reasonable dc op for the analysis. That might actually be a problem which is sometimes really hard to detect when one focuses on the cascode but not the basics. However, I can not really agree on two other notices regarding the circuit. Yes, transistors are biased by voltage rather then a current. The reason comes from the previous thread. The voltages I have peaked up has been generated through a successfully-tested beta-ratio multiplier for gpdk090. The sizing for the other technology, as well as bias voltages and supply stays the same. I do not want to say that I would expect 45nm tech behave the same as 90nm even with the same sizing - just to troubleshoot the error in spectre or model files by switching to the other technology. Regarding the third bullet point I would rather partially agree then disagree. The reason for that is that I would like to see the open loop gain of the opamp first before putting in in a feedback configurations. Even though open-loop gain is tested by stb analysis for a fully-differential configuration, which is the case for me, the first thing to do before starting on checking the specs is a simple dc op, which, again, I have been trying to do here. I would like to see some reasonable overdrive across all the devices in cascode and the output slopes to get a zero-order's estimation for the gain. Or have you meant the common-mode feedback?All above means it is not working and it is normal behavior.
- There is no proper connection in current mirror
- Transistors are biased by voltage
- The circuit is suppose to be a high gain OTA, while no feedback is present.
MOSFETs are biased by current through current mirror. This is the only way to bias any MOSFET properly. Even simplest CS amplifier has to be biased by current through current mirror, while signal is DC blocked. By voltage, you can bias BJT not MOSFET.Yes, transistors are biased by voltage rather then a current.
It is not possible to get OL gain with no feedback configuration as OTA cannot be biased in proper operating point.The reason for that is that I would like to see the open loop gain of the opamp first before putting in in a feedback configurations.
Again, with no feedback (both differential and CMFB) you cannot expect any results. The input range of differential pair is around 50mV (depending to it OP). With 80dB OL Gain you have to set differential voltage between inputs with 1µV accuracy only because of gain. Any difference will strongly affect current in both OTA branches results in different OP of OTA transistors. You can play like this for long time getting nothing valuable.the first thing to do before starting on checking the specs is a simple dc op, which, again, I have been trying to do here. I would like to see some reasonable overdrive across all the devices in cascode and the output slopes to get a zero-order's estimation for the gain.
That makes sense. I am completely agree that transistors should be biased with a curret rather then a voltage. However, I am not really sure if that makes a difference for the simulator. Please correct me if I am wrong: When a current is passing through a diode-connected device, it generates the gate-source voltage needed for this device to maintain the same current; thereafter this gate-source voltage can be applied to the gate of the other device one can expect the second transistor to reproduce the mentionedd current. The voltages I am applying to the gates were previously generated by this circuit, which has been successfully tested.MOSFETs are biased by current through current mirror. This is the only way to bias any MOSFET properly. Even simplest CS amplifier has to be biased by current through current mirror, while signal is DC blocked. By voltage, you can bias BJT not MOSFET.
It is not possible to get OL gain with no feedback configuration as OTA cannot be biased in proper operating point.
Again, with no feedback (both differential and CMFB) you cannot expect any results. The input range of differential pair is around 50mV (depending to it OP). With 80dB OL Gain you have to set differential voltage between inputs with 1µV accuracy only because of gain. Any difference will strongly affect current in both OTA branches results in different OP of OTA transistors. You can play like this for long time getting nothing valuable.
Do things in proper way. You are getting errors in simulations not because something is wrong with gpdk (both gpdk090 and 45 are mature and well tested even if they are not real process) or simulator, but because testbench is wrong.
Start from single ended version in unity gain configuration. Then expand it to fully differential.
Good afternoon, Dominik and thank you for your reply! Yes, the supply connections have been messed up. I changed all of them to global ones which can be seen from the netlist. This time I extracted the whole oneAttached netlist is incomplete.
You are using global nets in subcircuit but not on the top level, so there is no supply connection in the instance I10. At least according to attached screenshots.
Something is fishy also, as in log spectre is complaining on lack of dc path between net Vip and 0. Looks like some nets are floating for some reason. It might results with some strange conditions for model, what could end up with shorts.
- Make supply nets global
- add nodeset for your biasing circuit (startup circuit is working in transient, not in dc)
- and please attach full netlist
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