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Totally inappropriate tool for the task. Unless you mean circuit simulation of the process, macro model style.
If you mean to arrive at an expected write time by simulation I think you're out of luck. Oxide drift and damage are still something you "back into from data to fit" last I talked to TCAD peeps who'd know.
So if it's circuit then you want that data to fit mechanism and outcome of your gate-zap model. Get data on limiting resistance dimension as well as voltage & time. If a prescribed programming method is called out, learn to emulate it (as seen by the zap element t=0 and as it evolves; an element that has a self limiting region must be hit hard (adiabatic) or get an unknown-quality, -reliability bit.
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