ahmad1954
Full Member level 4
I read an article about parallel differential pair(
). This is desired output(]).
I wanted to simulate this circuit with hspice but I didn't receive good result. this is my program in hspice:
------------------------------
Multi DIFFERENTIAL AMPLIFIER
.option post
M1a 1 v1 4 4 nch w=10u l=10u
M2a 1 v2 5 5 nch w=10u l=10u
M1b 3 v2 5 5 nch w=10u l=10u
M2b 3 v1 4 4 nch w=10u l=10u
M3a vdd vb 1 1 nch w=20u l=10u
M3b vdd vb 3 3 nch w=20u l=10u
M4 vdd vb 2 2 nch w=20u l=10u
M5a 2 v1 4 4 nch w=10u l=10u
M5b 2 v2 5 5 nch w=10u l=10u
M6a 4 6 vss vss nch w=10u l=10u
M6b 5 6 vss vss nch w=10u l=10u
R 6 0 1000meg
r1 v1 0 1000meg
r2 v2 0 1000meg
vdd vdd 0 dc 1.25
vss vss 0 dc -.75
vb vb 0 .2
.MODEL nch Nmos level=5
+ vt=.7 tox=292 frc=2.739e-2 dnb=2.423e16 ub=642.8
+ oxetch=-.98 xj=.29 latd=.34 ecv=4 vst=5.595e7
+ fsb=7.095e-5 scm=.4 fss=2.2e11 nwm=.93 phi=.61
+ tcv=1.45e-3 ptc=9e-5 bex=1.8
v1 v1 v2 SIN 0 10m 10kHZ
.TRAN 5US 200uS
.op
.PRINT TRAN id(M1b) id(m1a)
.end
-----------------------------------------------
circuit has some information: vdd=1.25, vss=-.75, bias current=1nA. and mos model is level 5 in 2um mosis process.
simulation in original article done with T-Spice.
which part of my program is incorect? I want to plot (idm vs vdm) and (gm vs vdm).
I wanted to simulate this circuit with hspice but I didn't receive good result. this is my program in hspice:
------------------------------
Multi DIFFERENTIAL AMPLIFIER
.option post
M1a 1 v1 4 4 nch w=10u l=10u
M2a 1 v2 5 5 nch w=10u l=10u
M1b 3 v2 5 5 nch w=10u l=10u
M2b 3 v1 4 4 nch w=10u l=10u
M3a vdd vb 1 1 nch w=20u l=10u
M3b vdd vb 3 3 nch w=20u l=10u
M4 vdd vb 2 2 nch w=20u l=10u
M5a 2 v1 4 4 nch w=10u l=10u
M5b 2 v2 5 5 nch w=10u l=10u
M6a 4 6 vss vss nch w=10u l=10u
M6b 5 6 vss vss nch w=10u l=10u
R 6 0 1000meg
r1 v1 0 1000meg
r2 v2 0 1000meg
vdd vdd 0 dc 1.25
vss vss 0 dc -.75
vb vb 0 .2
.MODEL nch Nmos level=5
+ vt=.7 tox=292 frc=2.739e-2 dnb=2.423e16 ub=642.8
+ oxetch=-.98 xj=.29 latd=.34 ecv=4 vst=5.595e7
+ fsb=7.095e-5 scm=.4 fss=2.2e11 nwm=.93 phi=.61
+ tcv=1.45e-3 ptc=9e-5 bex=1.8
v1 v1 v2 SIN 0 10m 10kHZ
.TRAN 5US 200uS
.op
.PRINT TRAN id(M1b) id(m1a)
.end
-----------------------------------------------
circuit has some information: vdd=1.25, vss=-.75, bias current=1nA. and mos model is level 5 in 2um mosis process.
simulation in original article done with T-Spice.
which part of my program is incorect? I want to plot (idm vs vdm) and (gm vs vdm).