silvaco simulation probleme

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youc16

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hello,
am trying to work on silvaco to analyze the breakdown voltage of a pin diode , but i have some difficulties , and errors messages are comeover like :
-process interrupted by signal SEGV
unable to trap bias
solution does not converge to given accuracy

and also i would like to understand how can i choose the nodeset , and why i have to do the stady state before the transient analysis

if somone could give me some explications i will be thankful
 

Do you wnat just get I-V characteristics from a diode?
What diod library do you use?

Can you post your netlist or a part of it with errors from output?
 

hello
actually am just trying to see the characteristic I-V and how the structure behave, (static study) and after that i switch to the transient study , at this moment , i still have problems of convergence of the structure , and the message errors is stil the same :

Warning: Solution diverging. Potential update too large.
Update: 3.48931e+16 Vstep: 7.16682e-09

Error: Bias step cut back more than 10
times. Cannot trap.

could you tel me which models that i should to choose

thanks
 

put numerical limit on current

climit etc

i think it is in newton statement

it is normal problem in breakdown simulations
 

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