mujahed
Newbie level 6
Hi
I want to design a short channel mosfet but i have an error in silvaco
please help me
i think the error is because of this line:
"diffus time=10 temp=900 weto2 press=1.0"
this the specification of my device:
Total Oxide Thickness: 1.5 nm
Oxide is composed of three layers: SiO2/HfO/SiON from the bulk to the gate contact
Use poly for G/D/S/and B contacts
Bulk Doping: 1.5x1019 cm-3
Junction depth for both S and D: 36 nm
S/D Doping: 1019 to 1021 must be verified to give the best performance of the device
Extend the D/S regions to 3 nm with two lightly doped drain (LDD) regions of 1015 to 10
17 into the channel (so that the D/S width extends from 50 nm to at most 52 nm)
thanks
I want to design a short channel mosfet but i have an error in silvaco
please help me
i think the error is because of this line:
"diffus time=10 temp=900 weto2 press=1.0"
this the specification of my device:
Total Oxide Thickness: 1.5 nm
Oxide is composed of three layers: SiO2/HfO/SiON from the bulk to the gate contact
Use poly for G/D/S/and B contacts
Bulk Doping: 1.5x1019 cm-3
Junction depth for both S and D: 36 nm
S/D Doping: 1019 to 1021 must be verified to give the best performance of the device
Extend the D/S regions to 3 nm with two lightly doped drain (LDD) regions of 1015 to 10
17 into the channel (so that the D/S width extends from 50 nm to at most 52 nm)
thanks
Code:
go athena
#
line x loc=0.0 spac=0.005
line x loc=0.035 spac=0.002
line x loc=0.055 spac=0.002
line x loc=0.075 spac=0.001
#
line y loc=0.0 spac=0.0001
line y loc=0.05 spac=0.001
line y loc=0.07 spac=0.001
line y loc=0.12 spac=0.005
#
init orientation=100 c.phos=1e14 space.mul=2
#pwell formation including masking off of the nwell
#
diffus time=5 temp=1000 dryo2 press=1.00 hcl=3
#
etch oxide thick=0.02
#
#P-well Implant
#
implant boron dose=3e16 energy=100 pears
#
diffus temp=750 time=5 weto2 hcl=3
#
#N-well implant not shown -
#
# welldrive starts here
diffus time=40 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3
#
diffus time=180 temp=1200 nitro press=1
#
diffus time=80 temp=1200 t.rate=-4.444 nitro press=1
#
etch oxide all
#
#sacrificial "cleaning" oxide
diffus time=5 temp=1000 dryo2 press=1 hcl=3
#
etch oxide all
#
#gate oxide grown here:-
#diffus time=1 temp=925 dryo2 press=1.00 hcl=3
depo oxide thick=0.0005
depo material=hfo2 thick=0.0005
depo material=SiON thick=0.0005
#
# Extract a design parameter
extract name="gateox" thickness oxide mat.occno=1 x.val=0.05
#
#vt adjust implant
implant boron dose=9.5e17 energy=10 pearson
#
depo poly thick=0.01 divi=10
#
#from now on the situation is 2-D
#
etch poly left p1.x=0.055
etch material=SiON left p1.x=0.04
etch material=hfo2 left p1.x=0.04
etch oxide left p1.x=0.035
#
method fermi compress
#diffus time=10 temp=900 weto2 press=1.0
#
implant phosphor dose=3.0e13 energy=20 pearson
#
depo oxide thick=0.012 divisions=8
#
etch oxide dry thick=0.012
#
implant arsenic dose=5.0e15 energy=50 pearson
#
method fermi compress
diffuse time=3 temp=900 nitro press=1.0
#
depo oxide thick=0.001 divisions=8
etch oxide left p1.x=0.035
# pattern s/d contact metal
#etch material=SiON left p1.x=0.035
#etch material=hfo2 left p1.x=0.035
#etch oxide left p1.x=0.035
deposit poly thick=0.005 divi=2
etch poly right p1.x=0.02
# Extract design parameters
# extract final S/D Xj
#extract name="nxj" xj silicon mat.occno=1 x.val=0.1 junc.occno=1
# extract the N++ regions sheet resistance
#extract name="n++ sheet rho" sheet.res material="Silicon" mat.occno=1 x.val=0.05 region.occno=1
# extract the sheet rho under the spacer, of the LDD region
#extract name="ldd sheet rho" sheet.res material="Silicon" \
mat.occno=1 x.val=0.3 region.occno=1
# extract the surface conc under the channel.
#extract name="chan surf conc" surf.conc impurity="Net Doping" \
material="Silicon" mat.occno=1 x.val=0.45
# extract a curve of conductance versus bias.
#extract start material="Polysilicon" mat.occno=1 \
bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45
#extract done name="sheet cond v bias" \
curve(bias,1dn.conduct material="Silicon" mat.occno=1 region.occno=1)\
outfile="extract.dat"
# extract the long chan Vt
#extract name="n1dvt" 1dvt ntype vb=0.0 qss=1e10 x.val=0.49
structure mirror right
electrode name=gate x=0.06 y=0.010
electrode name=source x=0.01
electrode name=drain x=0.14
electrode name=substrate backside
structure outfile=MOSFET.str
# plot the structure
tonyplot MOSFET.str -set sheme1.set
############# Vt Test : Returns Vt, Beta and Theta ################
go atlas
# set material models
models cvt srh print
contact name=gate n.poly
interface qf=3e10
method newton
solve init
# Bias the drain
solve vdrain=0.1
# Ramp the gate
log outf=mos1ex01_1.log master
solve vgate=0.2 vstep=0.1 vfinal=1.0 name=gate
save outf=mos1ex01_1.str
# plot results
tonyplot mos1ex01_1.log -set mos1ex01_1_log.set
# extract device parameters
extract name="nvt" (xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) \
- abs(ave(v."drain"))/2.0)
extract name="nbeta" slope(maxslope(curve(abs(v."gate"),abs(i."drain")))) \
* (1.0/abs(ave(v."drain")))
extract name="ntheta" ((max(abs(v."drain")) * $"nbeta")/max(abs(i."drain"))) \
- (1.0 / (max(abs(v."gate")) - ($"nvt")))
quit