Silvaco ATLAS SEU Simulation

[PedroMateo]

¡Hi everyone! I'm trying to simulate a track of protons in my simulation (I'm using Silvaco TCAD software, ATLAS library). I have a simple PIN diode structure made of GaAs and the idea is to see how this proton track affects the device, specially the reverse current curve.

I'm having some problems simulating this track with the "singleeventupset" sentences". Does anyone have an idea on how to simulate this type of phenomenon?

 

[FelipeAguilar]

Hi! It sounds like you’re trying to simulate proton-induced effects in a GaAs PIN diode using Silvaco TCAD, specifically focusing on Single Event Upsets (SEU). SEUs are typically the result of high-energy particles (like protons) interacting with the semiconductor material and causing temporary or permanent changes in the behavior of the device, which can manifest as changes in current-voltage (I-V) characteristics.

 

[PedroMateo]

Hi! It sounds like you’re trying to simulate proton-induced effects in a GaAs PIN diode using Silvaco TCAD, specifically focusing on Single Event Upsets (SEU). SEUs are typically the result of high-energy particles (like protons) interacting with the semiconductor material and causing temporary or permanent changes in the behavior of the device, which can manifest as changes in current-voltage (I-V) characteristics.

You are right Felipe. I'm trying to get an insight in how to program the SEU in my simulation.

 

[dick_freebird]

What you need to do, is impose a zero diameter
charge neutral high density free carrier ray on the
mesh. Then the TCAD "should" deal with that by
transport and recombination. But for the most
part this is undelivered promises. I know of one
that is not mainstream which does the dynamics,
well by accounts.

Now clearly a mesh built for zero-sized features
isn't in the cards. Building the plasma track inside
an existing mesh would be fine-remeshing into
a semi-infinite "tumor", seems to me.

I'm mildly curious how this tool purports to
get a multiphysics solution, or whether it's a
2-step where it solves the transistor in TCAD,
slathers an analytical layer on top for the charge
collection and plots it as if it were a true 4D solve.