[SOLVED] SilVACO ATLAS 3d NVM simulation

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go atlas
 
mesh space.mult=2 three.d
 
 
 
# Define variables
 
set lg = 0.2
set wfin = 0.05
set tox1 = 0.002
set tox2 = 0.008
set tox3 = 0.01
set hfin = 0.055
set hgate = 0.02
set wgate = 0.02
set hbox = 0.05
set delec = 0.02
set lds = 0.05
 
 
 
# Define mesh
 
x.mesh loc=0  spac=0.005
x.mesh loc=$wgate  spac=0.002
x.mesh loc=$wgate+$tox3  spac=0.002
x.mesh loc=$wgate+$tox3+0.5*$wfin  spac=0.004
x.mesh loc=$wgate+$tox3+$wfin  spac=0.002
x.mesh loc=$wgate+2*$tox3+$wfin  spac=0.002
x.mesh loc=2*$wgate+2*$tox3+$wfin  spac=0.005
 
y.mesh loc=0  spac=0.005
y.mesh loc=$delec  spac=0.005
y.mesh loc=$lds  spac=0.002
y.mesh loc=$lds+0.5*$lg  spac=0.007
y.mesh loc=$lds+$lg  spac=0.002
y.mesh loc=2*$lds+$lg-$delec  spac=0.005
y.mesh loc=2*$lds+$lg   spac=0.005
 
z.mesh loc=-$hbox spac=0.02
z.mesh loc=-$hbox/2 spac=0.01
z.mesh loc=0 spac=0.005
z.mesh loc=$tox3  spac=0.002
z.mesh loc=0.5*$hfin  spac=0.005
z.mesh loc=$hfin  spac=0.001
z.mesh loc=$hfin+$tox1  spac=0.0005
z.mesh loc=$hfin+$tox1+$tox2  spac=0.0005
z.mesh loc=$hfin+$tox1+$tox2+$tox3  spac=0.001
z.mesh loc=$hfin+$tox1+$tox2+$tox3+$hgate/5   spac=0.005
z.mesh loc=$hfin+$tox1+$tox2+$tox3+$hgate   spac=0.005
 
 
 
 
# Define region
 
region number=1 material=air
 
# Fin/BOX
region number=2 x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin z.min=0 z.max=$hfin material=silicon
region number=3 z.min=-$hbox z.max=0 material=oxide
 
# gate dielectric
region number=4 x.min=0 x.max=$wgate y.min=$lds y.max=$lds+$lg z.min=0 z.max=$tox3 material=oxide
region number=4 x.min=$wgate+$wfin+2*$tox3 x.max=2*$wgate+$wfin+2*$tox3 y.min=$lds y.max=$lds+$lg z.min=0 z.max=$tox3 material=oxide
region number=4 x.min=$wgate x.max=$wgate+$tox3 y.min=$lds y.max=$lds+$lg z.min=0 z.max=$hfin+$tox1+$tox2+$tox3 material=oxide
region number=4 x.min=$wgate+$tox3+$wfin x.max=$wgate+2*$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=0 z.max=$hfin+$tox1+$tox2+$tox3 material=oxide
region number=4 x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$hfin z.max=$hfin+$tox1 material=oxide
region number=4 x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$hfin+$tox1+$tox2 z.max=$hfin+$tox1+$tox2+$tox3 material=oxide
 
region number=5 x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$hfin+$tox1 z.max=$hfin+$tox1+$tox2 material=nitride
 
 
# gate
region number=6 x.min=0 x.max=$wgate y.min=$lds y.max=$lds+$lg z.min=$tox3 z.max=$hfin+$tox1+$tox2+$tox3+$hgate material= polysilicon
region number=6 x.min=$wgate+$wfin+2*$tox3 x.max=2*$wgate+$wfin+2*$tox3 y.min=$lds y.max=$lds+$lg z.min=$tox3 z.max=$hfin+$tox1+$tox2+$tox3+$hgate material= polysilicon
region number=6 x.min=$wgate x.max=$wgate+2*$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$hfin+$tox1+$tox2+$tox3 z.max=$hfin+$tox1+$tox2+$tox3+$hgate material=polysilicon
 
 
 
 
# Define electrode
 
electrode name=gate x.min=$wgate+2*$tox3+$wfin x.max=2*$wgate+2*$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$tox3 z.max=$hfin+$tox1+$tox2+$tox3
electrode name=gate2 x.min=0 x.max=2*$wgate+2*$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$hfin+$tox1+$tox2+$tox3 z.max=$hfin+$tox1+$tox2+$tox3+$hgate
electrode name=gate3 x.min=0 x.max=$wgate y.min=$lds y.max=$lds+$lg z.min=$tox3 z.max=$hfin+$tox1+$tox2+$tox3
 
electrode name=source x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=0 y.max=$delec z.min=0 z.max=$hfin
electrode name=drain x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=2*$lds+$lg-$delec y.max=2*$lds+$lg z.min=0 z.max=$hfin
#electrode name=fgate x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=$lds #y.max=$lds+$lg z.min=$hfin+$tox1 z.max=$hfin+$tox1+$tox2
 
# Define doping
doping region=2 uniform p.type conc=1e15
doping region=2 uniform n.type conc=1e20 y.max=$lds
doping region=2 uniform n.type conc=1e20 y.min=$lds+$lg
 
interface n.i
 
material material=oxide semiconductor nc300=1e19 nv300=1e19 taun0=1.0 taup0=1.0 mc=0.4 mv=0.4
 
material material=nitride semiconductor nc300=1e19 nv300=1e19 mun=1.0e-1 mup=1.0e-1 mc=0.4 mv=0.4 taun0=1.0 taup0=1.0 
 
contact name=gate n.poly
contact name=gate2 n.poly
contact name=gate3 n.poly
 
 
nitridecharge  nt.p=0.0e20 nt.n=1.0e20 tau.n=1.0e-4 tau.p=1.0e-4 elec.depth=1.5 hole.depth=1.5 sigmat.n=1.0e-10 sigmat.p=1.0e-10 sigman.p=1.0e-15 sigmap.n=1.0e-15 pf.barrier=1.5
 
probe name=nettcharge sonos.charge integrate z.min=$hfin+$tox1 z.max=$hfin+$tox1+$tox2 x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=$lds y.max=$lds+$lg
 
 
#programming
models srh
method carriers=2
 
 
solve init sonos
solve prev
 
output sonos.rates val.band con.band band.temp
 
probe name=nettcharge sonos.charge integrate z.min=$hfin+$tox1-0.005 z.max=$hfin+$tox1+$tox2+0.005 x.min=$wgate+$tox3-0.005 x.max=$wgate+$tox3+$wfin+0.005 y.min=$lds-0.005 y.max=$lds+$lg+0.005 
 
log outf=program.log j.tun sonos.curr
solve vgate=16 ramptime= 1e-9 tstep=1e-12 tfinal=1e-9
 
#keep voltages constant and perform transient programming
 
method dt.min=1.0e-9
solve tstop=1.0e-8 
save outf=sonosex03_charging_m8.str
solve tstop=1.0e-7 
method dt.min=1.0e-8
solve tstop=1e-6
save outf=sonosex03_charging_m6.str
method dt.min=1.0e-7
solve tstop=1e-5 
method dt.min=1.0e-6
solve tstop=1e-4 
save outf=sonosex03_charging_m4.str
method dt.min=1.0e-5
solve tstop=1e-3 
method dt.min=1.0e-4
solve tstop=1e-2 
save outf=sonosex03_charging_m2.str
method dt.min=1.0e-3
solve tstop=1.0e-1 
solve tstop=1.0 
save outf=sonosex03_charging_m0.str
log off 
##### Vt test after programming
 
 
quit