moisten
Newbie level 6
n-well contact
Hi, I try to use silicide and N-well to form Schottky diode. While laying out in IBM CMRF8SF, I used three layers: n-well, square stud contact(to connect active area or polysilicon line to metal 1) and metal 1. (Certainly there's a DRC error which needs to be explained to foundry). Will silicide and N-well contact be created in this way? If no, I can use n-well, active region, square stud contact and metal 1 to create the Schottky contact. But How to block the source&drain ion implantation?
Thanks a lot.
Hi, I try to use silicide and N-well to form Schottky diode. While laying out in IBM CMRF8SF, I used three layers: n-well, square stud contact(to connect active area or polysilicon line to metal 1) and metal 1. (Certainly there's a DRC error which needs to be explained to foundry). Will silicide and N-well contact be created in this way? If no, I can use n-well, active region, square stud contact and metal 1 to create the Schottky contact. But How to block the source&drain ion implantation?
Thanks a lot.