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Yes, here are the reason
1. SiGe is more suitable for production.
2. GaAs is worst.
3. The mobility is higer for SiGe at higher frequency
than GaAs, hence GaAs loose its advantage of high
mobility to silicon based components
4. Lot of investment to SiGe (people low it )
InP, GaAs are used for HBT and HEMT which are highly nonlinear and have high current handling capability. The noise figure of HEMT is comparable to SiGe BJT.
Of course, SiGe is more integrated and cheaper than HBT and HEMT. So I think they will co-exist.
When lowest noise is required, the choice of semiconductor chemistry ist'n enough. A cooldown should be performed.
FETs (HEMTs) are coolable, BJT aren't.
So i don't think HEMT technologies and related chemistry will dissapear,... i hope!
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