SiC MOSFET driving method

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I am working on onboard charger project for electric vehicle of 11kW rating.
In that I considered UCC21750-Q1 SiC MOSFET driver. (Datasheet attached)

I have query that which MOSFET driving method is suitable bootstrap or zener diode method (negative bias supply)?

What are the pro & cons of bootstrap method over negative bias zener diode method for driving SiC MOSFETs?
Can negative bias be generated by bootstrap method for SiC MOSFETs?

For PFC -
Input = 415 VAC, Freq = 50 Hz
Output = 650 to 800 VDC @ 11kW

For High voltage DC converter -
Input = 650 to 800 VDC
Output = 200 to 450 VDC @ 10kW

For Low voltage DC converter -
Input = 200 to 450 VDC
Output = 9 to 16 VDC @ 3kW

Regards,
Abhishek
 

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Wow - you really have a hill to climb with this project .....

2 zeners can provide +18V and -4v7, with the mid point being the 0v source connection ( do i really need to spell that out ? )

a charge pump off the 18V, cap limited, can provide the -4v7 that the zener limits ...
 

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    Techman_7

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Hello,

Thanks for reply.
But which driving method is more suitable with bootstrap or without bootstrap?
Can u pls suggest pros & cons of these two MOSFET driving methods?
Topology used in dual active bridge.
 

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It's not clear what you mean by "bootstrap or zener diode method". These don't sound mutually exclusive, and they only describe minor aspects of the gate drive.
 

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