T
Surely a single inductor would have stray capacitance too?....so is the ringing really a particular problem for series inductor chains?One possible problem with series inductors is the midpoint ringing a lot due to the self resonance of the inductors. If this is a problem then damping it with a RC snubber network may be necessary.
Thanks yes i agree, but the spikes of current at FET switch ON are those spikes coming through the RC dampers which exist across each of the series inductors.I wouldn't expect the FET/diode current to be substantially different due to the excited resonance
Reverse recovery and capacitor spike happen at the same time, reverse recovery current magnitude is a large multiple of the latter. In so far it sounds a bit arbitrary to worry about the capacitor spike. As already mentioned, your simulation model uses an unrealistic high inductor parallel capacitance, respectively the snubber dimensioning can be corrected. Don't know if the point still matters after that.but the spikes of current at FET switch ON are those spikes coming through the RC dampers which exist across each of the series inductors.
I am not speaking here about the spikes of current which come through the reverse recovering boost diode.
Thanks, the thing is, the diode’s reverse recovery spikes don’t flow in the sense resistor, as we can see from the attached PFC schematic (LTspice simulation also attached).Reverse recovery and capacitor spike happen at the same time, reverse recovery current magnitude is a large multiple of the latter. In so far it sounds a bit arbitrary to worry about the capacitor spike. As already mentioned, your simulation model uses an unrealistic high inductor parallel capacitance, respectively the snubber dimensioning can be corrected. Don't know if the point still matters after that.
Thanks, so regarding putting rc snubbers across the fet or diode, ..you dont see it as a problem that an rc snubber across the fet is shorted out and therefore non functional when the mosfet is turned on?......likewise an rc snubber across the diode when it is conducting.Besides partial resonances with asymmetrical inductor values, you also get free-wheeling resonance in DCM, a respective snubber could be connected across the MOSFET or diode if you are worried about the oscillation.
Depends what exactly those snubbers were meant to snub... for example for a snubber placed across a FET to dampen very high frequency ringing due to parasitic inductance, the FET never really shorts out that snubber, due to those same parasitics. If that snubber was meant to dampen another parasitic resonance, then it should be moved to more effectively couple to those parasitics.Thanks, so regarding putting rc snubbers across the fet or diode, ..you dont see it as a problem that an rc snubber across the fet is shorted out and therefore non functional when the mosfet is turned on?......likewise an rc snubber across the diode when it is conducting.
Thanks, yes same with us.In my case I'm considering it simply because real life part availability is limited and splitting the problem into multiple inductors gives me more mechanical flexibility.
We use cookies and similar technologies for the following purposes:
Do you accept cookies and these technologies?
We use cookies and similar technologies for the following purposes:
Do you accept cookies and these technologies?