Sentaurus Device IV curve "innerVoltage" "OuterVoltage"

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sjsajidhasan

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Hello everyone.
I am a graduate student working on a CMOS photo sensor (PGSPAD). My sensor is almost similar to a CMOS MOSFET. My question is,
I want to plot drain voltage vs drain current at different gate voltages. But I am confused about which one to use for the drain voltage "innerVoltage" or "OuterVoltage"? And what is the difference between the "innerVoltage" and "OuterVoltage"?
 

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It might be the "core device" vs that plus the "access resistance" (probe resistance, contact resistance, cabling).

A second question is whether certain elements of a FET like ohmic S/D regions, LDD or LDMOS drift region (which nohow deserves bundles into a classic symmetric MOS model, acting more as a cascoded JFET in series with the drain, gate is body). That, I haven't the TCAD experience so say.

What does the manual have to say?
 

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