FIG. 3a shows a self-biased cascode configuration. The bias for G2 3A06 is provided by the series connection of Rb 3A10 and Cb 3A20. The point between Rb and Cb, labeled as 3A25, is where G2 3A06 is tied. The DC voltage applied to G2 3A06 is thus the same as the DC voltage applied to D2 3A07 (at DC Cb is an open circuit, Rb has no current and thus no voltage drop, and all the voltage at D2 3A07 appears across Cb). The RF swing at D2 3A07 is thus attenuated by the low pass nature of the Rb−Cb 3A10−3A20 series connection. In power amplifier applications, it is desirable to have RF swing at G2. This enables having a larger signal swing at D2 without facing the breakdown voltage at G2−D2 3A06−3A07. As D2 3A07 increases, G2 3A06 also increases (with a smaller value, as set by Rb−Cb) and so does S2 3A08. In this way, the amount of voltage drop on each gate-drain in M1 and M2 can be balanced. The values of Rb and Cb can be chosen for optimum performance and signal swing before gate-drain breakdown occurs in either M1 or M2.
Such self-biased cascode configuration can also be viewed as a compound of transistor with one gate, one drain and one source. As is obvious, it does not require any additional bondpad to provide a supply voltage to G2.
It is noted that in the circuit of FIG. 3a, G2 follows the RF voltage of D2 in both the positive and negative swings about its DC value.