Since Dual-Gate FET is a four-terminal device, the traditional model of S-parameter S2p is not enough to model the device. Anyone who have experienced on it because it is quite common employed in Mixer design ?
Since Dual-Gate FET is a four-terminal device, the traditional model of S-parameter S2p is not enough to model the device. Anyone who have experienced on it because it is quite common employed in Mixer design ?