The breakdown voltage of ESD is larger than 20V. But the Vgs of process is smaller than 5v. And the Vds can afford 20V.
How to consider or design ESD I should?
What is the difference of MOS ESD structure and DIODE ESD struture, and what are their advantage and disadvantage?
The breakdown voltage of ESD is larger than 20V. But the Vgs of process is smaller than 5v. And the Vds can afford 20V.
How to consider or design ESD I should?
What is the difference of MOS ESD structure and DIODE ESD struture, and what are their advantage and disadvantage?