A CMOS bandgap reference circuit with sub-1-V operation
Banba, H. Shiga, H. Umezawa, A. Miyaba, T. Tanzawa, T. Atsumi, S. Sakui, K.
Toshiba Corp., Yokohama, Japan;
This paper appears in: Solid-State Circuits, IEEE Journal of
Publication Date: May 1999
Volume: 34 , Issue: 5
On page(s): 670 - 674
Meeting Date: 06/11/1998 - 06/13/1998
Location: Honolulu, HI
ISSN: 0018-9200
CODEN: IJSCBC
INSPEC Accession Number:6248065
Digital Object Identifier: 10.1109/4.760378
Posted online: 2002-08-06 22:27:59.0
Abstract
This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, In the conventional BGR circuit, the output voltage Vref is the sum of the built-in voltage of the diode Vf and the thermal voltage VT of kT/q multiplied by a constant. Therefore, Vref is about 1.25 V, which limits a low supply-voltage operation below 1 V. Conversely, in the proposed BGR circuit, Vref has been converted from the sum of two currents; one is proportional to Vf and the other is proportional to VT. An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-μm flash memory process. Measured Vref is 518±15 mV (3σ) for 23 samples on the same wafer at 27-125°C