Sorry, I don't know if I understand it correctly. Although the rapid reverse recovery of SIC will reduce the reverse leakage power consumption, I think it is necessary to distinguish between occasions. SIC needs higher driving voltage to have more efficient performance, that is, VTH parameters. If the drive voltage cannot exceed the VTH voltage quickly, its performance will not be better than that of the FET, and it may even fail to work. For example, when the drive voltage of the controller is low in the case of active bridgeless rectifier, the SIC cannot work.