Reply to thread

The Figures of Merit (FoM) for this part is it's RdsOn*Cout' at 400V  or RdsOn*Qoss product. This results is shorter switching times.

The down side is the RdsOn is much higher than a Si chip of similar size,  requires a negative Vgs to turn off faster and the tolerance for Vgs(th) max/min is 2.36.  This variation comes the β=1/2⋅μ⋅Cox⋅W/L process control.

[ATTACH=full]198165[/ATTACH]

If you ignore the excessive Id max> 50 A for the GaN FET, here I attempted to set Vgs=Vds and short circuit current by computing Id, and Ron vs Vgs=Vds.  But Rds increases above 50A is not accounted for and I had to compute the Beta from the rated RdsOn.   It didn't turn out perfectly because Beta changes from Vgs(th) min to max and they do not specify RdsOn min to max.

[ATTACH=full]198164[/ATTACH]