RDSon comparison between 2 devices

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chinmoy.khaund

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I have 2 device with specifications as
Chip size area: 10.24mm2
RDSon: 0.5 ohm (Vg=10v and Id=1A)

Chip size area: 23.36mm2
RDSon: 0.14 ohm (Vg=10v and Id=12A)

Now I am carrying out TCAD simulation for these 2 devices, my purpose is to know which 1 device in these two specification is a Super junction and which is a MOSFET.
Can anyone suggest me to compare the above 2 specifications in the same scale.

Feel free to ask me any question regarding this.

Thanks in advance
 

It's a bit unclear to me just what "super junction" really
means. I've seen it used in SiC devices referring to a
hetrojunction BJT, and I've seen it refer to MOSFET
variants (without an explanation of differences).

Now, a ~ 2X improvement per area would make me pick
#2 as being the more "super", but that's a rough engineer
guess about what marketing babble really means. Evidently
the "super junction MOSFET" is still a MOSFET, only using
some charge trickery to extend breakdown and a more
elaborate vertical construction (deep trenches, asymmetric
oxides on them, etc.).

Many interesting pictures on Google if you search the term.
 

That could be a trade secret. How does it compare to Toshiba's 8th gen. DTMOS super junction?

SSM6K504NU
RDS(ON) max of 26 mΩ(@4.5V) for 9A, 20V max. in a 2x2.1 case (UDFN6B)= 6.5 mΩ/sq.mm. Including epoxy border.

Is comparable to your large chip. But Qg=37.6nC, Ciss=2700pF and
Rth(ch-c)=3/W (read as deg C/W)

:roll:
 

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