Hi,
Sorry-I overseed it...
If distances between dot & coil are in both (all) versions same_I think must be not relevant, than you are on the finding for relative values, differences..
K.
Added after 55 minutes:
You can find some description over the proposed calculations in a relative old book: ISBN 3-89649--430-9,
P. A. Passeraub: An integrated inductive proximity sensor_a thesis so 10 years before.
He finded out for exampl. that a thicker coil separation form Si (called SU8 process) brings ca. 4x higher Q_with same parameter as N, D_ and no correlation in diverse thicknesses of Si.
In 1. solution:
Standard 10um gold bumping layer over 4um Si dioxide. (usual TAB process)
In 2. solution:
SU8 thick photoresist is in process,
Copper lines are 60um thick,gap to Si(formed by SU8Layer) is 15um.
The self resonat frequency changed from ca. 22 to 35 MHz too... References: [2.27 & 2.28]
For me is important from ther book, chapter 2.4: "Flat coil in spiral":
Rint/Rout referenced to maximal L value is at ca. 0.12, but L/Rs max is at ca. 0.3.
I belief, if you se the diagramms, it is a good compromise at Ri/Ro by ca. 0.2...
K.